savantic semiconductor product specification silicon npn power transistors 2SC3253 description with to-220 package short switching time low collector saturation voltage complement to type 2sa1289 applications various inductance lamp drivers for electrical equipment inverters,converters power amplifier switching regulator ,driver pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter 80 v v ceo collector- emitter voltage open base 60 v v ebo emitter-base voltage open collector 5 v i c collector current 5 a i cm collector current-peak 7 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3253 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma ,r be = ; 60 v v (br)cbo collector- base breakdown voltage i c =1ma ,i e =0 80 v v (br)ebo emitter-base breakdown voltage i e =1ma ,i c =0 5 v v cesat collector-emitter saturation voltage i c =2.5a; i b =0.125a 0.4 v i cbo collector cut-off current v cb =40v; i e =0 100 a i ebo emitter cut-off current v eb =4v; i c =0 100 a h fe dc current gain i c =1a ; v ce =2v 70 280 f t transition frequency i c =1a ; v ce =5v 100 mhz h fe classifications q r s 70-140 100-200 140-280
savantic semiconductor product specification 3 silicon npn power transistors 2SC3253 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC3253
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